Advanced Device Physics

This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design. Study Goals: This course aims at a thorough understanding of the physics of advanced semiconductor devices.

Begin Course

University

TU Delft

Professor

Rene van Swaaij

Lectures

14 Lectures

University

TU Delft

Professor

Rene van Swaaij

Lectures

14 Lectures